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| Ordering number : ENA0492 CPH5518 SANYO Semiconductors DATA SHEET CPH5518 Applications * PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Relay drivers, lamp drivers, motor drivers. Features * * * Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density mounting. The CPH5518 consists of two chips encapsulated in a package which are equivalent to the CPH3116 and the CPH3216, respectively. Ultrasmall package facilitate miniaturization in end products (0.9mm mounting height). ( ) : PNP Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC PC Tj Tstg Mounted on a ceramic board (600mm20.8mm) 1unit Mounted on a ceramic board (600mm20.8mm) Conditions Ratings (--50)80 (--)50 (--)5 (--)1.0 (--)3.0 (--)200 0.9 1.2 150 --55 to +150 Unit V V V A A mA W W C C Marking: EN Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22807EA TI IM TC-00000532 No. A0492-1/5 CPH5518 Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwideth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob Conditions VCB=(--)40V, IE=0A VEB=(--)4V, IC=0A VCE=(--)2V, IC=(-)100mA VCE=(--)10V, IC=(--)300mA VCB=(--)10V, f=1MHz IC=(--)500mA, IB=(--)10mA Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)300A, IB=(--)6mA Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf IC=(--)500mA, IB=(--)10mA IC=(--)10A, IE=0A IC=(--)1mA, RBE= IE=(-)10A, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 200 420 (9)6 (--230) 130 (--125) 90 (--)0.81 (--50)80 (--)50 (--)5 (36)38 (173)332 (28)40 (-380) 190 (-200) 135 (--)1.2 Ratings min typ max (--)0.1 (--)0.1 560 MHz pF mV mV mV mV V V V V ns ns ns Unit A A Package Dimensions unit : mm (typ) 7017A-009 Electlical Connection 5 0.6 4 3 2.9 0.15 5 4 3 0.2 2.8 1.6 0.05 1 : Collector (NPN TR) 2 : Collector (PNP TR) 3 : Base (PNP TR) 4 : Emitter Common 5 : Base (NPN TR) 1 2 0.6 1 0.95 2 0.4 Top view 1 : Collector (NPN TR) 2 : Collector (PNP TR) 3 : Base (PNP TR) 4 : Emitter Common 5 : Base (NPN TR) SANYO : CPH5 Switching Time Test Circuit PW=20s D.C.1% INPUT VR 50 RB + 100F VBE= --5V + 470F VCC=25V IB1 IB2 OUTPUT 0.9 0.2 RL=24 IC=20IB1= --20IB2=500mA (For PNP, the polarity is reversed.) No. A0492-2/5 CPH5518 --1.0 IC -- VCE mA --4 0m A --50 0 --3 mA --20m [PNP] 1.0 IC -- VCE A mA 2 0m A [NPN] --0.9 --0.8 Collector Current, IC -- A Collector Current, IC -- A 50mA --0.7 --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 A --10m mA --8 --6mA 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 40m A 10mA 8mA 30 6mA 4mA 2mA --4mA --2mA IB=0mA --0.8 --0.9 --1.0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 IB=0mA 0.9 1.0 Collector-to-Emitter Voltage, VCE -- V --1.0 --0.9 IT11440 IC -- VBE Collector-to-Emitter Voltage, VCE -- V 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 IT11441 [PNP] IC -- VBE [NPN] VCE= --2V VCE=2V Collector Current, IC -- A --0.7 --0.6 --0.5 --0.4 --0.3 Ta=7 5C 25C --25C Collector Current, IC -- A --0.8 5C 25C 0.7 --0.2 --0.1 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 0.2 0.1 0 --0.6 --0.7 --0.8 --0.9 --1.0 0 0.1 0.2 0.3 0.4 0.5 Ta= 7 0.6 --25 C 0.8 0.9 1.0 Base-to-Emitter Voltage, VBE -- V 1000 7 5 IT11415 Base-to-Emitter Voltage, VBE -- V 1000 7 5 IT11416 hFE -- IC [PNP] VCE= --2V hFE -- IC Ta=75C [NPN] VCE=2V Ta=75C DC Current Gain, hFE DC Current Gain, hFE 3 2 3 2 --25C 25C --25C 25C 100 7 5 3 2 100 7 5 3 2 10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 5 3 IT01647 Collector Current, IC -- A 5 3 IT01648 f T -- IC [PNP] VCE= --10V f T -- IC [NPN] VCE=10V Gain-Bandwidth Product, f T -- MHz 2 Gain-Bandwidth Product, f T -- MHz 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 2 1000 7 5 3 2 100 7 5 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 1000 7 5 3 2 100 7 5 3 2 --0.01 Collector Current, IC -- A IT01649 Collector Current, IC -- A IT01650 No. A0492-3/5 CPH5518 100 7 Cob -- VCB [PNP] f=1MHz 100 7 Cob -- VCB [NPN] f=1MHz Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF 5 3 2 5 3 2 10 7 5 3 2 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 IT01651 10 7 5 3 2 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT01652 Collector-to-Base Voltage, VCB -- V 5 3 2 VCE(sat) -- IC Collector-to-Base Voltage, VCB -- V 3 [PNP] IC / IB=20 2 VCE(sat) -- IC [NPN] IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 0.1 7 5 --0.1 7 5 3 2 C 75 Ta= --25 C C 25 3 2 7 Ta= 5C 25 C C --25 --0.01 --0.01 2 3 5 7 --0.1 2 3 5 Collector Current, IC -- A --1.0 7 --1.0 IT11417 7 0.01 0.01 2 3 5 7 0.1 2 3 5 VCE(sat) -- IC Collector Current, IC -- A 5 7 1.0 IT11418 [PNP] VCE(sat) -- IC [NPN] IC / IB=50 IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 3 2 0.1 7 5 --0.1 7 5 3 2 --0.01 2 3 5 7 7 Ta= 5C C 25 7 Ta= 5C C --25 C --25 3 2 0.01 C 25 --0.1 2 3 5 Collector Current, IC -- A --10 7 --1.0 IT11419 7 2 3 5 7 0.1 2 3 5 Collector Current, IC -- A 10 7 7 1.0 IT11420 VBE(sat) -- IC [PNP] IC / IB=50 Base-to-Emitter Saturation Voltage, VBE(sat) -- V VBE(sat) -- IC [NPN] IC / IB=50 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 5 3 2 5 3 2 --1.0 7 5 3 2 Ta= --25C 75C 25C 1.0 7 5 3 2 Ta= --25C 75C 25C --0.1 --0.01 2 3 5 7 --0.1 2 3 5 Collector Current, IC -- A --1.0 IT01657 7 0.1 0.01 2 3 5 7 0.1 2 3 5 Collector Current, IC -- A 7 1.0 IT01658 No. A0492-4/5 CPH5518 5 3 2 ASO ICP=3A [PNP / NPN] 1.4 PC -- Ta [PNP / NPN] Mounted on a ceramic board (600mm20.8mm) 10 Collector Current, IC -- A 1.0 7 5 3 2 0.1 7 5 3 2 IC=1A Collector Dissipation, PC -- W 1m s 10 m s 1.2 0 s 50 s 0 1.0 0.9 0.8 DC 10 op 0m s To t 1u nit er al ati di on 0.6 ss ip ati on 0.4 0.01 0.1 Ta=25C Single pulse Mounted on a ceramic board (600mm20.8mm) For PNP, minus sign is omitted 2 3 5 7 1.0 2 3 5 7 10 2 3 57 IT09272 0.2 0 0 20 40 60 80 100 120 140 160 Collector-to-Emitter Voltage, VCE -- V Ambient Temperature, Ta -- C IT11421 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of February, 2007. Specifications and information herein are subject to change without notice. PS No. A0492-5/5 |
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